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| MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 24 A 0.23 Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 21N50 24N50 21N50 24N50 Maximum Ratings 500 500 20 30 21 24 84 96 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 200 1 0.25 0.23 V Applications Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 nA A mA Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density l IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved l l 21N50 24N50 Pulse test, t 300 s, duty cycle d 2 % l V l l l l l l 91536F(5/97) 1-4 IXTH 21N50 IXTM 21N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 11 21 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 450 135 24 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 33 65 30 160 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 28 75 30 45 80 40 190 40 85 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W 1 IXTH 24N50 IXTM 24N50 TO-247 AD (IXTH) Outline gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK VDS = 10 V; ID = 0.5 * ID25, pulse test 2 3 Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 21N50 24N50 21N50 24N50 21 24 84 96 1.5 600 A A A A V ns Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-204 AE(IXTM) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V Pins 1 - Gate 2 - Source Case - Drain Dim. A A1 b D e e1 Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675 L 11.18 12.19 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 21N50 IXTM 21N50 IXTH 24N50 IXTM 24N50 Fig. 1 Output Characteristics 50 45 40 35 30 25 20 15 10 5 0 5V TJ = 25C VGS = 10V Fig. 2 Input Admittance 50 45 40 35 30 25 20 15 10 5 0 TJ = 25C 7V 6V ID - Amperes 0 5 10 15 20 25 30 35 ID - Amperes 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.6 TJ = 25C Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 2.25 1.5 RDS(on) - Normalized RDS(on) - Normalized 1.4 1.3 VGS = 10V 2.00 1.75 1.50 1.25 1.00 0.75 ID = 12A 1.2 1.1 1.0 0.9 0 5 10 15 20 25 30 35 40 45 50 VGS = 15V 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 1.2 30 24N50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage VGS(th) BVCES 1.1 BV/VG(th) - Normalized 25 50 75 100 125 150 ID - Amperes 1.0 0.9 0.8 0.7 0.6 20 21N50 10 0 -50 -25 0 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2000 IXYS All rights reserved 3-4 IXTH 21N50 IXTM 21N50 IXTH 24N50 IXTM 24N50 Fig.7 Gate Charge Characteristic Curve 10 9 8 7 VDS = 250V ID = 12.5A IG = 10mA Fig.8 Forward Bias Safe Operating Area 100 Limited by RDS(on) 10s 100s ID - Amperes VGE - Volts 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 10 1ms 10ms 1 100ms 0.1 1 10 100 500 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25 Coss Crss f = 1 Mhz VDS = 25V Fig.10 Source Current vs. Source to Drain Voltage 50 Ciss 45 40 35 30 25 20 15 10 5 0 0.00 TJ = 125C TJ = 25C Capacitance - pF ID - Amperes 0.25 0.50 0.75 1.00 1.25 1.50 VDS - Volts VSD - Volt Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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